pBTI stress broadens IGZO band tail states causing negative VT shifts, revealed by DC and 1/f noise data with reversibility confirmed by recovery and hydrogen-doping simulations.
Silicon RibbonFET CMOS at 6nm Gate Length
3 Pith papers cite this work. Polarity classification is still indexing.
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SEMIDV simulator adds localization landscape theory for quantum corrections and a ballistic mobility model to drift-diffusion simulations, demonstrated on 6 nm GAA FETs with a proposed 4.5 nm design at 0.45 V.
A review of integrated photonic computing that organizes low- to high-dimensional architectures and argues that exploiting light's full dimensionality offers a path to scalable, energy-efficient information processing.
citing papers explorer
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Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements
pBTI stress broadens IGZO band tail states causing negative VT shifts, revealed by DC and 1/f noise data with reversibility confirmed by recovery and hydrogen-doping simulations.
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SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects
SEMIDV simulator adds localization landscape theory for quantum corrections and a ballistic mobility model to drift-diffusion simulations, demonstrated on 6 nm GAA FETs with a proposed 4.5 nm design at 0.45 V.
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Integrated photonic computing: towards high-dimensional information processing
A review of integrated photonic computing that organizes low- to high-dimensional architectures and argues that exploiting light's full dimensionality offers a path to scalable, energy-efficient information processing.