Carbon implantation in the gain layer of HPK LGADs provides a clear improvement in radiation tolerance after proton and neutron irradiation, unlike oxygen-related modifications or boron-phosphorus compensation.
Moll, Displacement damage in silicon de- tectors for high energy physics, IEEE Trans- actions on Nuclear Science 65 (2018) 1561–1582
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Systematic Investigation of Acceptor Removal in HPK LGADs with Modified Gain Layers
Carbon implantation in the gain layer of HPK LGADs provides a clear improvement in radiation tolerance after proton and neutron irradiation, unlike oxygen-related modifications or boron-phosphorus compensation.