The authors use deformation potential theory plus quantum confinement to find the strain and Ge fraction that shifts the Si conduction minimum to the L valley in a SiGe/Si(111)/SiGe stack, compute the critical thickness before plastic relaxation, and assess feasibility for spin-qubit use.
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
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SiGe/Si(111)/SiGe heterostructure for Si spin qubits with electrons confined in L valley of conduction band
The authors use deformation potential theory plus quantum confinement to find the strain and Ge fraction that shifts the Si conduction minimum to the L valley in a SiGe/Si(111)/SiGe stack, compute the critical thickness before plastic relaxation, and assess feasibility for spin-qubit use.