Hall and resistivity data on Ge crystals show the n-to-p transition temperature increases with impurity concentration due to competition between impurity-band and intrinsic conduction.
and Danielson G C 1957 Ames Laboratory Technical Reports-170, IOWA State College, ISC-926
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Impurity concentration dependent electrical conduction in germanium crystal at low temperatures
Hall and resistivity data on Ge crystals show the n-to-p transition temperature increases with impurity concentration due to competition between impurity-band and intrinsic conduction.