Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.
Dopant -segregation to grain boundaries controls electrical conductivity of n-type NbCo(Pt)Sn half-Heusler alloy mediating thermoelectric performance
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Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering
Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.