Electrothermal simulations of amorphous Ge2Sb2Te5 show threshold switching occurs via thermal runaway in a single ~2 nm filament, with snapback field falling at higher temperature and longer device lengths.
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing,
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Modeling Filamentary Conduction in Reset Phase Change Memory Devices
Electrothermal simulations of amorphous Ge2Sb2Te5 show threshold switching occurs via thermal runaway in a single ~2 nm filament, with snapback field falling at higher temperature and longer device lengths.