Room-temperature fabrication protocol for SBS topological insulator nanodevices that preserves low carrier density, shown via quantum oscillations, gate tunability, and weak antilocalization.
At (Vg - Vg0) = 0 V , i.e., near the Dirac point, the supercurrent I similarly exhibits reduced resilience to Bz (Fig
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Gate-tunable ambipolar Josephson current demonstrated in MBE-grown (Bi,Sb)2Te3 topological insulator films, suppressed near Dirac point but persisting across it, weaker in thicker films due to bulk channels.
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Fabrication of high-quality topological insulator nanodevices from bulk-insulating air-sensitive Sb-Bi$_2$Se$_3$
Room-temperature fabrication protocol for SBS topological insulator nanodevices that preserves low carrier density, shown via quantum oscillations, gate tunability, and weak antilocalization.
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Gate-Tunable Ambipolar Josephson Current in a Topological Insulator
Gate-tunable ambipolar Josephson current demonstrated in MBE-grown (Bi,Sb)2Te3 topological insulator films, suppressed near Dirac point but persisting across it, weaker in thicker films due to bulk channels.