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cond-mat.mtrl-sci 1

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2025 1

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CONDITIONAL 1

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Thermal excitation of flexoelectricity in silicon

cond-mat.mtrl-sci · 2025-06-25 · conditional · novelty 6.0

Intrinsic silicon's flexoelectric coefficient rises from 15.2 nC/m to 1.8 μC/m between 223 and 473 K, and the Arrhenius slope is claimed to reproduce the silicon bandgap.

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  • Thermal excitation of flexoelectricity in silicon cond-mat.mtrl-sci · 2025-06-25 · conditional · none · ref 5

    Intrinsic silicon's flexoelectric coefficient rises from 15.2 nC/m to 1.8 μC/m between 223 and 473 K, and the Arrhenius slope is claimed to reproduce the silicon bandgap.