A 200 nm recessed-gate AlGaN/GaN MOS-HEMT on Si reaches VTH above 5 V and on-current near 0.5 A/mm, a combination absent from the cited comparison table.
Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate,
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Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm
A 200 nm recessed-gate AlGaN/GaN MOS-HEMT on Si reaches VTH above 5 V and on-current near 0.5 A/mm, a combination absent from the cited comparison table.