DFT calculations show that doping a single layer of Si3N4 with electrons or holes switches it from insulator to metal, but the paper's electronegativity and conductivity interpretations are flawed.
Riley, Silicon nitride and related materials, J
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Electronic structure of SLSiN under charge density modulation
DFT calculations show that doping a single layer of Si3N4 with electrons or holes switches it from insulator to metal, but the paper's electronegativity and conductivity interpretations are flawed.