Applying bias across graphene electrodes converts near-interface boron vacancies in thin hBN from the optically active VB- state to the optically dark VB2- state, quenching photoluminescence by a few percent.
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Charge state tuning of spin defects in hexagonal boron nitride
Applying bias across graphene electrodes converts near-interface boron vacancies in thin hBN from the optically active VB- state to the optically dark VB2- state, quenching photoluminescence by a few percent.