Aluminum KIDs with a-Si:H parallel-plate capacitors are dominated by GR/photon noise down to ~0.1 Hz, with TLS noise upper limits consistent with prior high-frequency data.
Characterization of the low electric field and zero-temperature two-level-system loss in hydrogenated amorphous silicon,
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Low-Frequency Noise Performance of Microstrip-Coupled Lumped-Element Aluminum KIDs using Hydrogenated Amorphous Silicon Parallel-Plate Capacitors for NEW-MUSIC
Aluminum KIDs with a-Si:H parallel-plate capacitors are dominated by GR/photon noise down to ~0.1 Hz, with TLS noise upper limits consistent with prior high-frequency data.