QT-PUF is a gate-tunneling-leakage PUF for implantable IoMT devices, reporting 0.9999998 entropy, 0.5001 FHD, and 96 nW/bit in 65 nm CMOS simulations with low BER over typical voltage and temperature ranges.
27.4 Physically Unclonable Function in 28nm FD801 Technology Achieving High Reliability for AEC-Q100 Grade 1 and 1SO26262 ASIL-B
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QT-PUF: Quantum Tunneling Leakage Based PUF for Implantable IoMT Devices
QT-PUF is a gate-tunneling-leakage PUF for implantable IoMT devices, reporting 0.9999998 entropy, 0.5001 FHD, and 96 nW/bit in 65 nm CMOS simulations with low BER over typical voltage and temperature ranges.