Density functional theory shows nearest-neighbor aluminum dopant pairs in silicon bond and become electrically active in high spin states but self-compensate in low spin states.
Alane adsorption and dissociation on the Si(001) surface
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abstract
We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(001) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We calculated the energies of various structures along the pathway of successive dehydrogenation events following adsorption: AlH2, AlH and Al, finding a gradual, significant decrease in energy. For each stage, we analyse the structure and bonding, and present simulated STM images of the lowest energy structures. Finally, we find that the energy of Al atoms incorporated into the surface, ejecting a Si atom, is comparable to Al adatoms. These findings show that Al incorporation is likely to be as precisely controlled as P incorporation, if slightly less easy to achieve.
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cond-mat.mtrl-sci 1years
2019 1verdicts
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An Ab Initio Study of Aluminium self-compensation in Bulk Silicon
Density functional theory shows nearest-neighbor aluminum dopant pairs in silicon bond and become electrically active in high spin states but self-compensate in low spin states.