Simulations of 710 MeV Bi ions on 10-100 nm SiC films show the hillock-to-crater transition temperature rises with thickness and approaches 1534 K for bulk surfaces.
Cazaux, Calculated dependence of few -layer graphene on secondary electron emissions from SiC, Appl
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Swift heavy ion track formation in SiC films under high-temperature irradiation
Simulations of 710 MeV Bi ions on 10-100 nm SiC films show the hillock-to-crater transition temperature rises with thickness and approaches 1534 K for bulk surfaces.