Local sheet resistance in epitaxial graphene on 6H-SiC varies by up to 270% at low temperature and correlates with the SiC substrate termination and the graphene-substrate distance.
A., Wenderoth, M., Electronic Transport Properties of 1D- Defects in Graphene and Other 2D-Systems, Ann
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Substrate induced nanoscale resistance variation in epitaxial graphene
Local sheet resistance in epitaxial graphene on 6H-SiC varies by up to 270% at low temperature and correlates with the SiC substrate termination and the graphene-substrate distance.