Observation of even-denominator FQHSs at ν = 3/4 and 5/4 in lowest Landau level of 72.5-nm-wide GaAs quantum well, interpreted as two-component states.
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A displacement field induces a metal-insulator transition in hBN/ABA trilayer graphene moiré superlattices via layer polarization that enhances moiré coupling and opens a gap at the hole-doped secondary Dirac point.
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Observation of even-denominator fractional quantum Hall states at $\nu = 3/4$ and 5/4 in the lowest Landau level
Observation of even-denominator FQHSs at ν = 3/4 and 5/4 in lowest Landau level of 72.5-nm-wide GaAs quantum well, interpreted as two-component states.
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Layer-Polarization-Driven Metal-Insulator Transition in multi-band Graphene Moire' Superlattices
A displacement field induces a metal-insulator transition in hBN/ABA trilayer graphene moiré superlattices via layer polarization that enhances moiré coupling and opens a gap at the hole-doped secondary Dirac point.