Large grown-in offcuts on (100) β-Ga2O3 restore MBE growth rates to ~5 nm/min, yield UID ~2e15 cm−3, and support planar SBDs with 1.56 MV/cm average breakdown.
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm,
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Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut
Large grown-in offcuts on (100) β-Ga2O3 restore MBE growth rates to ~5 nm/min, yield UID ~2e15 cm−3, and support planar SBDs with 1.56 MV/cm average breakdown.