Silicon doping in AlN produces DX-center self-compensation that caps free electron concentrations independent of dopant level, with less severe effects in AlGaN alloys or c-BN.
Ning , author J
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Self-compensation by silicon $DX$ centers in ultrawide-bandgap nitrides
Silicon doping in AlN produces DX-center self-compensation that caps free electron concentrations independent of dopant level, with less severe effects in AlGaN alloys or c-BN.