InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.
c,d, HAADF micrograph and simulated HAADF of the proposed model through the [110] zone axis (front view)
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cond-mat.mtrl-sci 1years
2019 1verdicts
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Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.