Experimental measurements report linear thermal susceptibilities of 0.0126(4) nm/K, 0.062(2) nm/K and -0.037(2) K^{-1} for SiV zero-phonon line position, width and relative amplitude in Si-doped nanodiamonds, with up to 35% smaller values in Si,P-doped samples.
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Silicon-vacancy color centers in Si- and Si,P-doped nanodiamonds: thermal susceptibilities of photo luminescence band at 740 nm
Experimental measurements report linear thermal susceptibilities of 0.0126(4) nm/K, 0.062(2) nm/K and -0.037(2) K^{-1} for SiV zero-phonon line position, width and relative amplitude in Si-doped nanodiamonds, with up to 35% smaller values in Si,P-doped samples.