A GaAs HBT power amplifier for 5.125 to 7.125 GHz is claimed to reach 30.6 dBm P1dB and 26.5 dBm linear power, but the evidence shown is simulation only.
A comprehensive analysis of IMD behavior in RF CMOS power amplifiers,
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High-linearity power amplifier based on GaAs HBT
A GaAs HBT power amplifier for 5.125 to 7.125 GHz is claimed to reach 30.6 dBm P1dB and 26.5 dBm linear power, but the evidence shown is simulation only.