HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.
Heavy-Ion Charge Yield Measure- ment by Floating Gate Dosimeters
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The RD50-MPW4 DMAPS shows 100% charge collection efficiency, 226 μm depletion depth, and peripheral charge sharing when mapped in 3D with TPA-TCT.
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A Heavy Ion Monitor on a Chip Based on a Non-Volatile Memory Architecture -- Part II: Device Characterization & Modeling
HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.
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TPA-TCT Analysis of the RD50-MPW4 Monolithic Pixel Particle Detector
The RD50-MPW4 DMAPS shows 100% charge collection efficiency, 226 μm depletion depth, and peripheral charge sharing when mapped in 3D with TPA-TCT.