Increasing the perpendicular electric field in a bilayer graphene quantum dot switches the lowest shell filling from 4 electrons with a 2+2 spin sequence to 12 electrons with a 6+6 spin sequence, via trigonal warping minivalleys.
Spin-Valley Protected Kramers Pair in Bilayer Graphene
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abstract
The intrinsic valley degree of freedom makes bilayer graphene (BLG) a unique platform for semiconductor qubits. The single-carrier quantum dot (QD) ground state exhibits a two-fold degeneracy, where the two states that constitute a Kramers pair, have opposite spin and valley quantum numbers. Because of the valley-dependent Berry curvature, an out-of-plane magnetic field breaks the time-reversal symmetry of this ground state and a qubit can be encoded in the spin-valley subspace. The Kramers states are protected against known spin- and valley-mixing mechanisms because mixing requires a simultaneous change of both quantum numbers. Here, we fabricate a tunable QD device in Bernal BLG and measure a spin-valley relaxation time for the Kramers states of ${38~\mathrm{s}}$, which is two orders of magnitude longer than the ${0.4~\mathrm{s}}$ measured for purely spin-blocked states. We also show that the intrinsic Kane-Mele spin-orbit splitting enables a Kramers doublet single-shot readout even at zero magnetic field with a fidelity above ${99\%}$. If these long-lived Kramers states also possess long coherence times and can be effectively manipulated, electrostatically defined QDs in BLG may serve as long-lived semiconductor qubits, extending beyond the spin qubit paradigm.
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Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
Increasing the perpendicular electric field in a bilayer graphene quantum dot switches the lowest shell filling from 4 electrons with a 2+2 spin sequence to 12 electrons with a 6+6 spin sequence, via trigonal warping minivalleys.