Hole-doped Ru2TiSi is predicted to outperform electron-doped versions and could reach zT above 1 at 700 K if lattice thermal conductivity is reduced by Zr or Hf substitution.
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Thermoelectric transport in Ru$_2$TiSi full-Heusler compounds
Hole-doped Ru2TiSi is predicted to outperform electron-doped versions and could reach zT above 1 at 700 K if lattice thermal conductivity is reduced by Zr or Hf substitution.