NEGF formalism developed for discrete impurities in nanostructures separates short- and long-range potentials and derives nonlocal scattering rates in Wigner coordinates, applied to quasi-1D wires to show effects on potential, density of states, and mobility.
Sano, Fundamental aspects of semiconductor device modeling associated with discrete impurities: Nonequi- librium green’s function scheme, IEEE Trans
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Nonequilibrium Green's Function Formalism Applicable to Discrete Impurities in Semiconductor Nanostructures
NEGF formalism developed for discrete impurities in nanostructures separates short- and long-range potentials and derives nonlocal scattering rates in Wigner coordinates, applied to quasi-1D wires to show effects on potential, density of states, and mobility.