Hydrophilic SiO2 creates interface dipoles that modulate graphene electronics and cause polarity-dependent hysteresis in GFETs, shown via combined spectromicroscopy and transport measurements.
Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation
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Influence of interface dipole layers on the performance of graphene field effect transistors
Hydrophilic SiO2 creates interface dipoles that modulate graphene electronics and cause polarity-dependent hysteresis in GFETs, shown via combined spectromicroscopy and transport measurements.