A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.
Rao et al., « Spectroscopic evaluation of charge-transfer doping and strain in graphene/${\mathrm{MoS}}_{2}$ heterostructures », Phys
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
A new method to probe conducting filaments in MoS$_2$-based memristors
A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.