Ge in AlGaN is a DX center for aluminum fractions above about 50 percent, explaining the absence of dark EPR signals, photo-induced persistent EPR, and the aluminum-dependent thermal quenching barrier.
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Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation
Ge in AlGaN is a DX center for aluminum fractions above about 50 percent, explaining the absence of dark EPR signals, photo-induced persistent EPR, and the aluminum-dependent thermal quenching barrier.