Graphene EMR devices achieve record room-temperature magnetoresistance (4.6 × 10^7%) and sensitivity (104 kΩ/T), and daisy-chaining them increases sensitivity linearly.
All three samples were electron-doped with charge neutrality points (CNPs) close to − 9 V
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2024 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Extraordinary magnetoresistance in high-quality graphene devices with daisy chains and Fermi-level pinning
Graphene EMR devices achieve record room-temperature magnetoresistance (4.6 × 10^7%) and sensitivity (104 kΩ/T), and daisy-chaining them increases sensitivity linearly.