Carbon-nitrogen interstitial pairs and oxygen-containing complexes are identified as the likely atomic structures for the N-line series in silicon, offering isoelectronic alternatives to the T-center for spin qubits.
Title resolution pending
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
verdicts
UNVERDICTED 2representative citing papers
In noncentrosymmetric materials such as ferroelectric GeTe, charge current generation is dominated by the Rashba-Edelstein effect rather than spin or orbital Hall effects.
citing papers explorer
-
First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon
Carbon-nitrogen interstitial pairs and oxygen-containing complexes are identified as the likely atomic structures for the N-line series in silicon, offering isoelectronic alternatives to the T-center for spin qubits.
-
Spin and orbital-to-charge conversion in noncentrosymmetric materials: Hall versus Rashba-Edelstein effects
In noncentrosymmetric materials such as ferroelectric GeTe, charge current generation is dominated by the Rashba-Edelstein effect rather than spin or orbital Hall effects.