HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.
Data retention after heavy ion exposure of floating gate memories: analysis and simulation
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
physics.ins-det 1years
2026 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
A Heavy Ion Monitor on a Chip Based on a Non-Volatile Memory Architecture -- Part II: Device Characterization & Modeling
HIMoC devices produce threshold-voltage shifts from 24.8 MeV/u heavy ions that are modeled as Gaussian charge-loss profiles and scale linearly with fluence times LET times area.