Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.
Reliability Improvement of High Mobility Oxide TFTs Based on Hydrogen-Resistant PEALD Al2O3 Gate Insulators Grown with N2O Plasma,
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High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.