Submonolayer h-BN forms on Ni at 600°C with B-rich surface via diffusion-precipitation and decomposes at 800°C, observed by XPS.
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Growth Process of Hexagonal Boron Nitride in the Diffusion and Precipitation Method Studied by X-ray Photoelectron Spectroscopy
Submonolayer h-BN forms on Ni at 600°C with B-rich surface via diffusion-precipitation and decomposes at 800°C, observed by XPS.