Wafer-scale 2-inch beta-Ga2O3 MOSFETs fabricated with >3 kV breakdown and reported uniformity in threshold voltage, current density, and breakdown across the wafer.
Performance Enhancement of MOCVD Grown β-Ga2O3 MOSFETs on Silicon Substrates via AlN Buffer Layer,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages
Wafer-scale 2-inch beta-Ga2O3 MOSFETs fabricated with >3 kV breakdown and reported uniformity in threshold voltage, current density, and breakdown across the wafer.