Amorphous Zn-Sn-O is a viable IGZO alternative for transistor channels but shares IGZO's susceptibility to hydrogen-induced doping, as shown by statistically sampled DFT modeling of 1250+ structural models.
TFT- Based Near-Sensor In-Memory Computing: Circuits and Architect ure Perspectives of Large-Area eDRAM and ROM CiM Chips
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Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O
Amorphous Zn-Sn-O is a viable IGZO alternative for transistor channels but shares IGZO's susceptibility to hydrogen-induced doping, as shown by statistically sampled DFT modeling of 1250+ structural models.