Simulations show a band-pass spin-filtering MTJ can write with about 12 times lower energy and a TMR near 35,000 percent, assuming coherent resonant transport.
An Overview of Nonvolatile Emerging Memories-Spintronics for Working Memories,
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory
Simulations show a band-pass spin-filtering MTJ can write with about 12 times lower energy and a TMR near 35,000 percent, assuming coherent resonant transport.