A reduced electrothermal model with stochastic terms and an absorbing boundary broadens the SEB threshold into a probabilistic band and predicts noise-induced subthreshold runaway.
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The MuPix11 HV-MAPS shows uniform in-pixel X-ray response at nominal bias and threshold but location-dependent reduced response at pixel boundaries when operated at zero reverse bias.
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Stochastic first-passage modeling of single-event burnout in SiC power MOSFETs
A reduced electrothermal model with stochastic terms and an absorbing boundary broadens the SEB threshold into a probabilistic band and predicts noise-induced subthreshold runaway.
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Investigation of the in-pixel response of the Mupix11 monolithic pixel sensor using a microfocus X-ray beam at Diamond Light Source
The MuPix11 HV-MAPS shows uniform in-pixel X-ray response at nominal bias and threshold but location-dependent reduced response at pixel boundaries when operated at zero reverse bias.