Amorphous InZnO films with Zn/(In+Zn) ratio around 0.12 and moderate oxygen deficiency act as effective transparent conductive barriers preventing Cu diffusion into Si at 200°C for 20 hours.
Chen et al., Tantalum-doped tin oxide films as an effective diffusion barrier for copper metallization of silicon heterojunction solar cells, Sol
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Accelerated development of amorphous InZnO thin films as transparent conductive Cu diffusion barriers
Amorphous InZnO films with Zn/(In+Zn) ratio around 0.12 and moderate oxygen deficiency act as effective transparent conductive barriers preventing Cu diffusion into Si at 200°C for 20 hours.