Ni/Al0.68Sc0.32N/4H-SiC ferroelectric capacitors switch up to 1000 °C and show stable retention and endurance at 600-800 °C, a promising step for high-temperature non-volatile memory.
Review on non-volatile memory with high-k dielectrics: Flash for generation beyond 32 nm
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Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {\deg}C
Ni/Al0.68Sc0.32N/4H-SiC ferroelectric capacitors switch up to 1000 °C and show stable retention and endurance at 600-800 °C, a promising step for high-temperature non-volatile memory.