Using DFT, kinetic Monte Carlo, and quantum transport, the authors show that TiO2-terminated SrTiO3 switches via oxygen-vacancy-modulated Schottky barriers, while SrO-terminated cells switch filamentarily.
Low Power and High Speed Switching of Ti-Doped NiO ReRAM Under the Unipolar Voltage Source of Less than 3; V; 2007 IEEE International Electron Devices Meeting, 2007
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells
Using DFT, kinetic Monte Carlo, and quantum transport, the authors show that TiO2-terminated SrTiO3 switches via oxygen-vacancy-modulated Schottky barriers, while SrO-terminated cells switch filamentarily.