Increasing Te substitution in Bi2(Se1-xTex)3 lowers the Dirac point binding energy and bulk DOS, producing a metallic-to-semiconducting resistivity transition with surface-state dominance at high Te.
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Chemical tuning of electronic and transport properties of the Bi-Se-Te family of topological insulators
Increasing Te substitution in Bi2(Se1-xTex)3 lowers the Dirac point binding energy and bulk DOS, producing a metallic-to-semiconducting resistivity transition with surface-state dominance at high Te.