Altermagnetic tunnel junctions based on KV2Se2O exhibit low-bias negative differential resistance and sign-inverting ultra-high TMR due to the material's quasi-2D Fermi surface.
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Negative Differential Resistance and Ultra-High TMR in Altermagnetic Tunnel Junctions
Altermagnetic tunnel junctions based on KV2Se2O exhibit low-bias negative differential resistance and sign-inverting ultra-high TMR due to the material's quasi-2D Fermi surface.