Temperature-dependent Hall and resistivity data on USD-grown Ge crystals show high cryogenic mobility, carrier freeze-out, and multi-scattering regimes interpreted via a Matthiessen-inspired phenomenological model.
Mei, Journal of Low Temperature Physics216, 522 (2024), arXiv:2310.11955 [physics.ins-det]
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Temperature-Dependent Charge Transport in USD-Grown High-Purity Germanium: Interplay Between Freeze-Out and Multi-Scattering Mechanisms
Temperature-dependent Hall and resistivity data on USD-grown Ge crystals show high cryogenic mobility, carrier freeze-out, and multi-scattering regimes interpreted via a Matthiessen-inspired phenomenological model.