SEMIDV simulator adds localization landscape theory for quantum corrections and a ballistic mobility model to drift-diffusion simulations, demonstrated on 6 nm GAA FETs with a proposed 4.5 nm design at 0.45 V.
Screening in Ultrashort (5 nm) Channel MoS2 Transistors: A Full -Band Quantum Transport Study,
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SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects
SEMIDV simulator adds localization landscape theory for quantum corrections and a ballistic mobility model to drift-diffusion simulations, demonstrated on 6 nm GAA FETs with a proposed 4.5 nm design at 0.45 V.