A new microscopic model for surface roughness scattering introduces atomic-site probability densities for interface roughness and derives a nonlocal Green's function scattering rate that aligns with experimental parameters and predicts higher SR-limited mobility than standard approaches.
Screening effect and quantum transport in a silicon inversion layer in strong magnetic field
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Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model
A new microscopic model for surface roughness scattering introduces atomic-site probability densities for interface roughness and derives a nonlocal Green's function scattering rate that aligns with experimental parameters and predicts higher SR-limited mobility than standard approaches.