A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.
Kim et al., « Zero-static power radio-frequency switches based on MoS2 atomristors », Nat Commun, vol
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A new method to probe conducting filaments in MoS$_2$-based memristors
A mechanical exfoliation method enables direct surface characterization of MoS2 memristors, revealing that conducting filaments form via metallic atom migration from the top electrode.