Space-charge limited transport with trap-suppressed carrier density governs the observed Ohmic-to-nonlinear transition in silicon RNPUs, confirmed by I-V scaling and drift-diffusion simulations.
Mikolajick et al., Reconfigurable field effect transistors: a technology enablers perspective, Solid-State Electron
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.other 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Space-Charge Effects in Silicon Reconfigurable Nonlinear-Processing Units
Space-charge limited transport with trap-suppressed carrier density governs the observed Ohmic-to-nonlinear transition in silicon RNPUs, confirmed by I-V scaling and drift-diffusion simulations.