A 40 nm ZrN buffer raises the real GaN nanowire growth temperature by about 17°C for fixed heater power, and an aluminum-wire pyrometer calibration compensates for this so identical arrays grow on Si and ZrN/Si.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
PAMBE growth of GaN nanowires on metallic ZrN buffers -- a critical impact of ZrN layer thickness on the growth temperature
A 40 nm ZrN buffer raises the real GaN nanowire growth temperature by about 17°C for fixed heater power, and an aluminum-wire pyrometer calibration compensates for this so identical arrays grow on Si and ZrN/Si.