Electroforming in HfOx/Ti RRAM is governed by a switch from vertical to lateral vacancy motion as the oxide becomes oxygen-poor, and by whether heating is uniform or local.
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Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering
Electroforming in HfOx/Ti RRAM is governed by a switch from vertical to lateral vacancy motion as the oxide becomes oxygen-poor, and by whether heating is uniform or local.